STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS

被引：57

作者：

DUKE, CB

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：732 / 735

页数：4

共 30 条

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[4] ATOMIC GEOMETRY OF GASB(110) - DETERMINATION VIA ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY ANALYSIS
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[7] ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM ZNS(110)
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[8] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
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[9] TRENDS IN SURFACE ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTORS
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[10] DETERMINATION AND APPLICATION OF THE ATOMIC GEOMETRIES OF SOLID-SURFACES
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[J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 1 - 19