DLTS INVESTIGATIONS OF SI-SIO2 INTERFACE STATES OF ELECTRON-BEAM IRRADIATED MOS STRUCTURES

被引：6

作者：

HUBNER, K ^{[1
]}

KOSTER, H ^{[1
]}

DERLICH, B ^{[1
]}

ECKE, W ^{[1
]}

机构：

[1] ACAD SCI GDR,INST PHYS TECH,DDR-6900 JENA,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 118卷 / 02期

关键词：

D O I：

10.1002/pssb.2221180257

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K133 / K136

页数：4

共 9 条

[1] GENERATION OF INTERFACE STATES IN MOS SYSTEMS [J].

BALK, P ;

KLEIN, N .

THIN SOLID FILMS, 1982, 89 (04) :329-338

[2]

ECKE W, 1981, PHYSIK HALBLEITERLEI, P99

[3]

HUBNER K, UNPUB ISOLATORPHYSIK

[4] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

JOHNSON, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :303-314

[5]

JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[7] INTIMATE VALENCE ALTERNATION PAIRS IN AMORPHOUS SIO2 [J].

LUCOVSKY, G .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :825-830

[8] CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO2/SI STRUCTURES WITH BIASING DURING ELECTRON-IRRADIATION [J].

ROSENCHER, E ;

BOIS, D .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :601-603

[9] MATERIAL AND DEVICE RESEARCH FOR VLSI IN JAPAN [J].

SUGANO, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :804-809

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