CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO2/SI STRUCTURES WITH BIASING DURING ELECTRON-IRRADIATION

被引：15

作者：

ROSENCHER, E

BOIS, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：601 / 603

页数：3

共 17 条

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[2]

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[6] EFFECT OF 2ND-NEAREST-NEIGHBOR FORCES ON VIBRATIONS OF AMORPHOUS SIO2 [J].

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JOANNOPOULOS, JD .

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[7]

MA JP, 1975, APPL PHYS LETT, V27, P61

[8] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[9]

MOTT NF, 1978, PHYSICS SIO2 ITS INT, P1

[10] CHEMICAL AND STRUCTURAL ASPECTS OF IRRADIATION BEHAVIOR OF SIO2-FILMS ON SILICON [J].

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