ULTRATHIN-FILM OHMIC CONTACTS FOR GAAS-FET

[1] GROSVENOR CRM, 1981, SOLID STATE ELECTRON, V24, P792

[2] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[3] HERRON L, 1975, I PHYS C SER, V24, P77

[4] UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 1029 - 1030

[5] MARLOW GS, 1983, SOLID STATE ELECTRON, V4, P259

[6] MOIZES I, 1982, SOLID STATE ELECTRON, V25, P440

[7] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 543 - 550

[8] THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (12) : 1073 - 1077

[1] GROSVENOR CRM, 1981, SOLID STATE ELECTRON, V24, P792

[2] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[3] HERRON L, 1975, I PHYS C SER, V24, P77

[4] UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 1029 - 1030

[5] MARLOW GS, 1983, SOLID STATE ELECTRON, V4, P259

[6] MOIZES I, 1982, SOLID STATE ELECTRON, V25, P440

[7] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 543 - 550

[8] THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (12) : 1073 - 1077