THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS

被引：31

作者：

SEBESTYEN, T

HARTNAGEL, HL

HERRON, LH

机构：

[1] UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND

[2] UNIV NEWCASTLE TYNE,DEPT ELECT & ELECTR ENGN,MERZ COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND

来源：

关键词：

D O I：

10.1109/T-ED.1975.18327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1073 / 1077

页数：5

共 19 条

[1] [Anonymous], 1971, SEMICONDUCT SEMIMET
[2] EFFECTIVE DISTRIBUTION COEFFICIENTS OF SOME GROUP-VI ELEMENTS IN INDIUM-PHOSPHIDE GROWN BY LIQUID-PHASE EPITAXY
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[J]. SOLID-STATE ELECTRONICS, 1974, 17 (05) : 505 - 507
[3] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[4] SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE
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[5] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
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[6] HANSEN M, 1960, CONSTITUTION BINARY
[7] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS
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[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &
[8] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS
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LEFUR, P
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4059 - +
[9] MIGITAKA M, 1972, P S GAAS I PHYS C SE, P249
[10] MILNES AG, 1972, HETEROJUNCTIONS META, P293