ELECTRICAL BEHAVIOR OF DOUBLE HETEROJUNCTION NPN GAALAS/GAAS/GAALAS BIPOLAR-TRANSISTORS

被引：14

作者：

BAILBE, JP

MARTY, A

REY, G

TASSELLI, J

BOUYAHYAOUI, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 06期

关键词：

D O I：

10.1016/0038-1101(85)90135-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：627 / 638

页数：12

共 9 条

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[3]

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[4] INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].

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[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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[6] ELECTRICAL BEHAVIOR OF AN NPN GAA1AS-GAAS HETEROJUNCTION TRANSISTOR [J].

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BAILBE, JP .

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[7]

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[8]

MARTY A, 1982, THESIS TOULOUSE

[9] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

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