PROBING ISLAND GROWTH AND COALESCENCE AT METAL-SEMICONDUCTOR INTERFACES

被引：7

作者：

FRANCIOSI, A

RAISANEN, A

HAUGSTAD, G

CECCONE, G

YU, X

机构：

[1] Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7914

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synchrotron-radiation photoemission spectroscopy of Xe atoms physisorbed on metal-semiconductor interfaces at different stages of interface formation allowed us to detect the presence of metal islands, determine the local work function of the islands and of the semiconductor surface between the islands, gauge the coverage dependence of the island size, and measure the coalescence coverage. This technique is a nondestructive, nonperturbative local probe of nucleation and growth with high spatial resolution and unparalleled surface sensitivity. We present detailed results for Yb-Hg1-xCdxTe(110) and preliminary results for K-GaAs(110). © 1990 The American Physical Society.

引用

页码：7914 / 7917

页数：4

共 13 条

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