ELECTRIC-FIELD DOMAINS IN SEMICONDUCTOR SUPERLATTICES - RESONANT AND NONRESONANT TUNNELING

被引：36

作者：

KWOK, SH

MERLIN, R

GRAHN, HT

PLOOG, K

机构：

[1] Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor

[2] Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.50.2007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence experiments detecting the occupation of higher subbands in GaAs-AlxGa1-xAs superlattices are used to determine the field strengths of electric-field domains. While the magnitude of the electric field in the low-field domain corresponds to resonant alignment of subbands in adjacent wells, the field strength in the high-field domain is below the value corresponding to the resonant field. These results are interpreted in terms of a simple model based on current conservation.

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页码：2007 / 2010

页数：4

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