Memory applications based on ferroelectric and high-permittivity dielectric thin films

被引：68

作者：

Jones, RE

Zurcher, P

Chu, P

Taylor, DJ

Lii, YT

Jiang, B

Maniar, PD

Gillespie, SJ

机构：

[1] Materials Research and Strategic Technologies, Motorola, Austin, TX 78721, 3501 Ed Bluestein Blvd.

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00106-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several metal oxide perovskites and Bi layered perovskites are of substantial interest for integrated circuit memories. Strontium titanate, barium strontium titanate, and lead zirconate titanate based paraelectrics are of particular interest for dynamic memory applications since they have high charge storage densities, low leakage currents, and resistance against time dependent dielectric breakdown sufficient to achieve gigabit densities and beyond. The high remanent polarization of ferroelectric lead zirconate titanate and strontium bismuth tantalate hold out the promise of low-voltage, high-speed, non-volatile memories. Advances are being made in the reliability of ferroelectric memories.

引用

页码：3 / 10

页数：8

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