HYDROGEN IMPLANTATION AND DIFFUSION IN SILICON AND SILICON DIOXIDE

Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the N-15 technique and by SIMS. Whereas hydrogen implanted at a fluence of 10(15) ions/cm(2) shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H-2 transformation of the hydrogen bonding.