PLASMA-ASSISTED DEPOSITION OF TUNGSTEN-CONTAINING SILOXANE THIN-FILMS

被引：9

作者：

FRACASSI, F ^{[1
]}

DAGOSTINO, R ^{[1
]}

PALUMBO, F ^{[1
]}

BELLUCCI, F ^{[1
]}

MONETTA, T ^{[1
]}

机构：

[1] UNIV NAPLES FEDERICO II,DIPARTIMENTO INGN MAT & PROD,I-80125 NAPLES,ITALY

来源：

THIN SOLID FILMS | 1995年 / 264卷 / 01期

关键词：

PLASMA PROCESSING AND DEPOSITION; SURFACE COMPOSITION; TUNGSTEN; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0040-6090(95)06600-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Composite films containing tungsten clusters dispersed in an organosilicon matrix have been deposited by simultaneous plasma-enhanced chemical vapour deposition of hexamethyldisiloxane-O-2-Ar mixtures and r.f. sputtering of a tungsten target. The effect of plasma conditions on the deposition process and film composition has been investigated. It is shown that actinometry can conveniently be utilized as an in-situ process parameter.

引用

页码：40 / 45

页数：6

共 9 条

[1]

BIEDERMAN H, 1990, PLASMA DEPOSITION TR

[2] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].