FERMI-LEVEL MOVEMENT AT GAAS(001) SURFACES PASSIVATED WITH SODIUM SULFIDE SOLUTIONS

被引：66

作者：

BERKOVITS, VL

BESSOLOV, VN

LVOVA, TN

NOVIKOV, EB

SAFAROV, VI

KHASIEVA, RV

TSARENKOV, BV

机构：

[1] A. F. Ioffe Physico-Technical Institute

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflectance anisotropy spectrometry is used to study the electronic properties of sulfide-passivated GaAs. The optical technique allows measurement of the Fermi-level displacement at the surface in situ, while the sample is immersed into a sulfide solution. The kinetics of the process was found to be very sensitive to conductivity type and doping level in GaAs.

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页码：3707 / 3711

页数：5

相关论文

共 24 条

[1] MEASUREMENTS OF ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE (001) SURFACE OF GAAS [J].

ACOSTAORTIZ, SE ;

LASTRASMARTINEZ, A .

SOLID STATE COMMUNICATIONS, 1987, 64 (05) :809-811

[2] ELECTRO-OPTIC EFFECTS IN THE OPTICAL ANISOTROPIES OF (001) GAAS [J].

ACOSTAORTIZ, SE ;

LASTRASMARTINEZ, A .

PHYSICAL REVIEW B, 1989, 40 (02) :1426-1429

[3] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[4]

BARBOUTH M, 1986, J ELECTROCHEM SOC, V733, P1663

[5] OPTICAL SPECTROSCOPY OF (110) SURFACES OF III-V SEMICONDUCTORS [J].

BERKOVITS, VL ;

KISELEV, VA ;

SAFAROV, VI .

SURFACE SCIENCE, 1989, 211 (1-3) :489-502

[6]

BERKOVITS VL, 1986, SOV PHYS SEMICOND+, V20, P654

[7] OXIDATION-STATES AND FERMI-LEVEL PINNING ON GAAS(1 1 0) SURFACE [J].

BERKOVITS, VL ;

KISELEV, VA ;

MINASHVILI, TA ;

SAFAROV, VI .

SOLID STATE COMMUNICATIONS, 1988, 65 (05) :385-388

[8]

BERKOVITS VL, 1991, FIZ TEKH POLUPROV, V25, P379

[9]

BERKOVITS VL, IN PRESS SOV PHYS SE

[10] COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS [J].

BESSER, RS ;

HELMS, CR .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4306-4310