A DYNAMIC 3-STATE MEMORY CELL FOR HIGH-DENSITY ASSOCIATIVE-PROCESSORS

被引：6

作者：

HERRMANN, FP

KEAST, CL

ISHIO, K

WADE, JP

SODINI, CG

机构：

[1] SONY CORP,ATSUGI TECHNOL CTR,SEMICOND GRP,ATSUGI,KANAGAWA 243,JAPAN

[2] THINKING MACHINES CORP,CAMBRIDGE,MA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 04期

关键词：

D O I：

10.1109/4.75051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dynamic associative processor cell is described. The cell stores three states (0, 1, and X) and performs read, match, and masked-write functions. Five MOS transistors are used, including two overlapping dual-gate structures available in M.I.T.'s CCD/CMOS technology. The use of the cell is an associative processor is described, and experimental results are presented.

引用

页码：537 / 541

页数：5

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