ELECTROLUMINESCENCE OF BALLISTIC AND PHONON EMITTING ELECTRONS IN THE P-TYPE BASE OF ALGAAS/GAAS HBT STRUCTURES

被引：2

作者：

FUKAI, YK

FURUTA, T

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

ALGAAS/GAAS HBT; ELECTROLUMINESCENCE; BALLISTIC ELECTRON; LO-PHONON; BALLISTIC MEAN FREE PATH;

D O I：

10.1143/JJAP.34.1208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the transport behavior of high-energy ballistic electrons in the p-type region using Npn-Al-x Ga1-xAs/GaAs heterojunction bipolar transistors (HBT) with an abrupt emitter-base heterojunction. The observed electroluminescence spectra from the base region show several high-energy peaks that are associated with ballistic electrons and with LO-phonon emissions. By varying the emitter-collector voltage, the neutral base width can be modulated, leading to a change in spatial electron distributions and thus determining the mean free paths of ballistic electrons.

引用

页码：1208 / 1212

页数：5

共 7 条

[1]

BEBB HB, 1977, SEMICONDUCT SEMIMET, V8, pCH4

[2] EVIDENCE OF HOT-ELECTRON TRANSFER INTO AN UPPER VALLEY IN GAAS [J].