ELECTROLUMINESCENCE OF BALLISTICALLY INJECTED ELECTRONS IN ALGAAS/GAAS HETERODIODES

被引:33
作者
PETERSEN, CL
FREI, MR
LYON, SA
机构
关键词
D O I
10.1103/PhysRevLett.63.2849
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2849 / 2852
页数:4
相关论文
共 13 条
[1]   CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS [J].
CHANG, LL .
SOLID-STATE ELECTRONICS, 1965, 8 (09) :721-&
[2]   CONDUCTION-BAND OFFSET DETERMINATION IN GAAS-ALXGA1-XAS THROUGH MEASUREMENT OF INFRARED INTERNAL PHOTOEMISSION [J].
GOOSSEN, KW ;
LYON, SA .
PHYSICAL REVIEW B, 1987, 36 (17) :9370-9373
[3]   HOT-ELECTRON SPECTROSCOPY [J].
HAYES, JR ;
LEVI, AFJ ;
WIEGMANN, W .
ELECTRONICS LETTERS, 1984, 20 (21) :851-852
[4]   DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].
HEIBLUM, M ;
NATHAN, MI ;
THOMAS, DC ;
KNOEDLER, CM .
PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203
[5]  
HEIIBLUM M, 1989, PHYS REV LETT, V62, P1057
[6]   SUBPICOSECOND TIME-RESOLVED RAMAN-SPECTROSCOPY OF LO PHONONS IN GAAS [J].
KASH, JA ;
TSANG, JC ;
HVAM, JM .
PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2151-2154
[7]   INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].
LEVI, AFJ ;
HAYES, JR ;
PLATZMAN, PM ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2071-2073
[8]   PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].
MALIK, RJ ;
AUCOIN, TR ;
ROSS, RL ;
BOARD, K ;
WOOD, CEC ;
EASTMAN, LF .
ELECTRONICS LETTERS, 1980, 16 (22) :836-837
[9]   HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS [J].
MIRLIN, DN ;
KARLIK, IJ ;
NIKITIN, LP ;
RESHINA, II ;
SAPEGA, VF .
SOLID STATE COMMUNICATIONS, 1981, 37 (09) :757-760
[10]   HIGH-GAIN LATERAL HOT-ELECTRON DEVICE [J].
PALEVSKI, A ;
UMBACH, CP ;
HEIBLUM, M .
APPLIED PHYSICS LETTERS, 1989, 55 (14) :1421-1423