IMPLANTATION AND CHANNELING EFFECTS OF ALKALI ION BEAMS IN SEMICONDUCTORS

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] BARTHOLOMEW CY, 1960, APPL PHYS, V31, P445

[3] CHANG YF, 1965, PRIVATE COMMUNICATIO

[4] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[5] ELKAREH LB, 1965, MAR P EL LAS BEAM ED, P163

[6] ALKALI ION DOPING OF SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (03) : 301 - &

[7] PROPERTIES OF SILICON P-N JUNCTIONS FORMED BY CS+ IMPLANTATION AT LOW ENERGIES [J]. APPLIED PHYSICS LETTERS, 1963, 3 (12) : 213 - 215

[8] MEDVED DB, 1964, 4526X EOS REP, P29

[9] MEDVED DB, 1965, MAR P EL LAS BEAM S, P163

[10] COMPUTER STUDIES OF SLOWING DOWN OF ENERGETIC ATOMS IN CRYSTALS [J]. PHYSICAL REVIEW, 1963, 132 (06): : 2385 - &

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] BARTHOLOMEW CY, 1960, APPL PHYS, V31, P445

[3] CHANG YF, 1965, PRIVATE COMMUNICATIO

[4] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[5] ELKAREH LB, 1965, MAR P EL LAS BEAM ED, P163

[6] ALKALI ION DOPING OF SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (03) : 301 - &

[7] PROPERTIES OF SILICON P-N JUNCTIONS FORMED BY CS+ IMPLANTATION AT LOW ENERGIES [J]. APPLIED PHYSICS LETTERS, 1963, 3 (12) : 213 - 215

[8] MEDVED DB, 1964, 4526X EOS REP, P29

[9] MEDVED DB, 1965, MAR P EL LAS BEAM S, P163

[10] COMPUTER STUDIES OF SLOWING DOWN OF ENERGETIC ATOMS IN CRYSTALS [J]. PHYSICAL REVIEW, 1963, 132 (06): : 2385 - &