THERMAL DONORS IN SILICON - CONSISTENT INTERPRETATION OF HALL-EFFECT AND CAPACITANCE TRANSIENT SPECTROSCOPY

被引：17

作者：

KELLER, W

WUNSTEL, K

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 01期

关键词：

D O I：

10.1007/BF00617181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9 / 12

页数：4

共 14 条

[1]

BENTON JL, 1982, UNPUB 12TH P INT C D

[2] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].

CAZCARRA, V ;

ZUNINO, P .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211

[3]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[4] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :699-707

[5]

Gaworzewski P., 1977, Kristall und Technik, V12, P189, DOI 10.1002/crat.19770120215

[6] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

[7] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[8]

KELLER W, 1982, UNPUB 12TH P C DEF S

[9] OXYGEN-RELATED DONOR STATES IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[10]

LANG DV, 1979, TOP APPL PHYS, V37, pCH3

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