EFFECT OF ION SPUTTERING ON INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF AU GAAS(100) SCHOTTKY CONTACTS

被引：70

作者：

WANG, YX

HOLLOWAY, PH

机构：

[1] Univ of Florida, Dep of Materials, Science & Engineering,, Gainesville, FL, USA, Univ of Florida, Dep of Materials Science & Engineering, Gainesville, FL, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：613 / 619

页数：7

共 26 条

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ASHOK, S
SINGH, R
[J]. THIN SOLID FILMS, 1982, 90 (03) : 231 - 235
[7] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
ASHOK, S
SINGH, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425
[8] GRUSEL E, 1982, J ELECTROCHEM SOC, V127, P1573
[9] ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES
KWAN, P
BHAT, KN
BORREGO, JM
GHANDHI, SK
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (02) : 125 - 129
[10] LANG DV, 1974, J APPL PHYS, V45, P3003

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