PROXIMITY EFFECT OF DISLOCATIONS ON GAAS-MESFET THRESHOLD VOLTAGE

被引：30

作者：

MIYAZAWA, S

HYUGA, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1109/T-ED.1986.22471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：227 / 233

页数：7

共 26 条

[1]

BLUNT RT, 1982, IEEE T ELECTRON DEV, V29, P1039

[2] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES [J].

CHIN, AK ;

VONNEIDA, AR ;

CARUSO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2386-2388

[3] UNIFORMITY CHARACTERIZATION OF SEMI-INSULATING GAAS BY CATHODOLUMINESCENCE IMAGING [J].

CHIN, AK ;

CARUSO, R ;

YOUNG, MSS ;

VONNEIDA, AR .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :552-554

[4] THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD [J].

EGAWA, T ;

SANO, Y ;

NAKAMURA, H ;

ISHIDA, T ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (01) :L35-L38

[5]

GRANT I, 1982, SEMIINSULATING 3 5 M, P98

[6] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

HEINKE, W ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[7] EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

YANG, J .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :419-421

[8]

HYUGA F, 1985, APPL PHYS LETT 0915

[9] CHARACTERIZATION OF THIN ACTIVE LAYER ON SEMI-INSULATING GAAS BY MAPPING OF FET ARRAY PERFORMANCE [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1051-1056

[10] THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFETS FABRICATED ON LEC-GROWN SEMI-INSULATING SUBSTRATES [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :800-804

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