INCOHERENT LIGHT-INDUCED DIFFUSION OF ARSENIC INTO SILICON FROM A SPIN-ON SOURCE

被引：17

作者：

BORISENKO, VE

LARSEN, AN

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.94433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：582 / 584

页数：3

共 19 条

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[3]

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[4]

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[5]

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[6] ARSENIC-IMPLANTED SI LAYERS ANNEALED USING A CW XE ARC LAMP [J].

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[7]

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[8]

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[9] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[10]

GIBBONS TF, 1981, LASER ELECTRON BEAM

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