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SUBTHRESHOLD SLOPE FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
被引:12
作者
:
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
TROUTMAN, RR
[
1
]
机构
:
[1]
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1975年
/ 22卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1975.18269
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1049 / 1051
页数:3
相关论文
共 3 条
[1]
SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
CHAKRAVARTI, SN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
CHAKRAVARTI, SN
[J].
IEEE TRANSACTIONS ON CIRCUIT THEORY,
1973,
CT20
(06):
: 659
-
665
[2]
SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(02)
: 55
-
60
[3]
WOLF HF, 1969, SILICON SEMICONDUCTO, P178
←
1
→
共 3 条
[1]
SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
CHAKRAVARTI, SN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
CHAKRAVARTI, SN
[J].
IEEE TRANSACTIONS ON CIRCUIT THEORY,
1973,
CT20
(06):
: 659
-
665
[2]
SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(02)
: 55
-
60
[3]
WOLF HF, 1969, SILICON SEMICONDUCTO, P178
←
1
→