APPROXIMATION OF WIRING DELAY IN MOSFET LSI

[1] BALABANIAN S, 1959, LINEAR NETWORK ANAL, P459

[2] BETENAN H, 1954, TABLES INTEGRAL TRAN, V1, P259

[3] Kumar U., 1980, IEEE Circuits and Systems Magazine, V2, P12, DOI 10.1109/MCAS.1980.6323701

[4] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[6] PENFIELD P, 1981, 18TH P DES AUT C, P613

[7] MODELING DISTRIBUTED RC-LINES FOR TRANSIENT ANALYSIS OF COMPLEX NETWORKS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 36 (05) : 709 - 717

[8] REIRSON RC, 1969, J APPL PHYS, V40, P118

[9] ACCURATE METALLIZATION CAPACITANCES FOR INTEGRATED-CIRCUITS AND PACKAGES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC-8 (04) : 289 - 290

[10] SIMPLE FORMULAS FOR TWO-DIMENSIONAL AND 3-DIMENSIONAL CAPACITANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 183 - 185

[1] BALABANIAN S, 1959, LINEAR NETWORK ANAL, P459

[2] BETENAN H, 1954, TABLES INTEGRAL TRAN, V1, P259

[3] Kumar U., 1980, IEEE Circuits and Systems Magazine, V2, P12, DOI 10.1109/MCAS.1980.6323701

[4] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[6] PENFIELD P, 1981, 18TH P DES AUT C, P613

[7] MODELING DISTRIBUTED RC-LINES FOR TRANSIENT ANALYSIS OF COMPLEX NETWORKS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 36 (05) : 709 - 717

[8] REIRSON RC, 1969, J APPL PHYS, V40, P118

[9] ACCURATE METALLIZATION CAPACITANCES FOR INTEGRATED-CIRCUITS AND PACKAGES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC-8 (04) : 289 - 290

[10] SIMPLE FORMULAS FOR TWO-DIMENSIONAL AND 3-DIMENSIONAL CAPACITANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 183 - 185