BISTABILITY IN COUPLED CAVITY SEMICONDUCTOR-LASERS

被引：18

作者：

DUTTA, NK

AGRAWAL, GP

FOCHT, MW

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：30 / 32

页数：3

共 11 条

[1]

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[2]

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COLDREN, LA ;

MILLER, BI ;

RENTSCHLER, JA .

ELECTRONICS LETTERS, 1982, 18 (21) :901-902

[4] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J].

EBELING, KJ ;

COLDREN, LA ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :6-8

[5]

HENRY CH, UNPUB IEEE J QUANTUM

[6] OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J].

KAWAGUCHI, H .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :702-704

[7] GAAS LASER AMPLIFIERS [J].

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[8]

LEIPHOLZ H, 1970, STABILITY THEORY, P33

[9] GAAS INJECTION LASER WITH NOVEL MODE CONTROL AND SWITCHING PROPERTIES [J].

NATHAN, MI ;

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MICHEL, AE ;

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[10]

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