OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION - RF PERFORMANCES

被引:16
作者
FRISCOURT, MR
ROLLAND, PA
机构
关键词
D O I
10.1109/EDL.1983.25678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:135 / 137
页数:3
相关论文
共 9 条
[1]   COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].
BOSCH, R ;
THIM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25
[2]   HIGH TRANSFORMATION RATIO FOR IMPEDANCE MATCHING WITH A RADIAL LINE [J].
DORING, KH ;
SEEBALD, E .
ELECTRONICS LETTERS, 1980, 16 (02) :50-51
[3]  
EDDISON IG, 1981, 11TH P EUR MICR C AM, P882
[4]  
EDDISON IG, 1982, MICROWAVE SYST N FEB, P91
[5]   THEORETICAL CONTRIBUTION TO THE DESIGN OF MILLIMETER-WAVE TEOS [J].
FRISCOURT, MR ;
ROLLAND, PA ;
CAPPY, A ;
CONSTANT, E ;
SALMER, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) :223-229
[6]   HOT-ELECTRON RELAXATION EFFECTS IN DEVICES [J].
KROEMER, H .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :61-67
[7]  
REES HD, 1981, 3RD HOT CARR C MONTP
[8]  
REES HD, 1981, J PHYS PARIS S10, V42
[9]   THEORETICAL-STUDY OF 100 GHZ GAAS TRANSFERRED-ELECTRON DEVICES [J].
ROLLAND, PA ;
FRISCOURT, MR ;
SALMER, G ;
CONSTANT, E .
JOURNAL DE PHYSIQUE, 1981, 42 (NC7) :171-176