THEORETICAL-STUDY OF 100 GHZ GAAS TRANSFERRED-ELECTRON DEVICES

被引:7
作者
ROLLAND, PA
FRISCOURT, MR
SALMER, G
CONSTANT, E
机构
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期
关键词
D O I
10.1051/jphyscol:1981719
中图分类号
学科分类号
摘要
引用
收藏
页码:171 / 176
页数:6
相关论文
共 11 条
[1]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[2]   COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].
BOSCH, R ;
THIM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25
[3]  
CAPPY A, 1981, THESIS LILLE
[4]   ELECTRON-RELAXATION EFFECTS IN TRANSFERRED-ELECTRON DEVICES REVEALED BY NEW SIMULATION METHOD [J].
JONES, D ;
REES, HD .
ELECTRONICS LETTERS, 1972, 8 (14) :363-&
[5]   OVERLENGTH MODES OF TRANSFERRED-ELECTRON OSCILLATORS [J].
JONES, D ;
REES, HD .
ELECTRONICS LETTERS, 1973, 9 (05) :105-106
[6]   ACCUMULATION TRANSIT MODE IN TRANSFERRED-ELECTRON OSCILLATORS [J].
JONES, D ;
REES, HD .
ELECTRONICS LETTERS, 1972, 8 (23) :566-+
[7]   REAPPRAISAL OF INSTABILITIES DUE TO TRANSFERRED ELECTRON EFFECT [J].
JONES, D ;
REES, HD .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10) :1781-1793
[8]   DETERMINATION OF TRANSIENT REGIME OF HOT CARRIERS IN SEMICONDUCTORS, USING THE RELAXATION-TIME APPROXIMATIONS [J].
NOUGIER, JP ;
VAISSIERE, JC ;
GASQUET, D ;
ZIMMERMANN, J ;
CONSTANT, E .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :825-832
[10]  
ROLLAND RA, 1979, ELECTRON LETT, V15, P373