AQUEOUS ELECTRODEPOSITION OF INP SEMICONDUCTOR-FILMS

被引:17
作者
SAHU, SN [1 ]
机构
[1] UNIV NEW S WALES,DEPT PHYS,KENSINGTON,NSW 2033,AUSTRALIA
关键词
D O I
10.1007/BF00720288
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:533 / 534
页数:2
相关论文
共 9 条
[1]   ELECTROLYTIC NI-PB-P ALLOYS [J].
BIELINSKI, J ;
BIELINSKA, A .
SURFACE TECHNOLOGY, 1985, 24 (03) :219-231
[2]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[3]   ELECTRODEPOSITED TUNGSTEN SELENIDE FILMS .1. PREPARATORY TECHNIQUE AND STRUCTURAL CHARACTERIZATION [J].
CHANDRA, S ;
SRIVASTAVA, ON ;
SAHU, SN .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 88 (02) :497-503
[4]   ELECTRODEPOSITED SEMICONDUCTING MOLYBDENUM SELENIDE FILMS .1. PREPARATORY TECHNIQUE AND STRUCTURAL CHARACTERIZATION [J].
CHANDRA, S ;
SAHU, SN .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (10) :2115-&
[5]   ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE [J].
CHOW, R ;
CHAI, YG .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :383-385
[6]  
Coutts T. J., 1985, Sixth E.C. Photovoltaic Solar Energy Conference, P174
[7]  
DHERE NG, 1985, 18TH IEEE PHOT SPEC, P1433
[8]  
RAJNARAYAN, 1985, SURF TECHNOL, V24, P233
[9]   THE GROWTH OF ULTRA-PURE INP BY VAPOR-PHASE EPITAXY [J].
TAYLOR, LL ;
ANDERSON, DA .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :55-59