COMPOSITION, ETCHING AND OPTICAL-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION PREPARED IN VARIABLE NH3-N2 GAS-MIXTURE DILUTED WITH HELIUM

被引：14

作者：

REYNES, B

ANCE, C

STOQUERT, JP

BRUYERE, JC

机构：

[1] UNIV MONTPELLIER 2,LESIC,F-34095 MONTPELLIER 5,FRANCE

[2] PHASE,F-67037 STRASBOURG,FRANCE

来源：

THIN SOLID FILMS | 1991年 / 203卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90519-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stoichiometric silicon nitride films were prepared by plasma-enhanced chemical vapour deposition at low frequency (50 kHz) and moderate temperature (350-degrees-C) with reactive gases diluted in helium. IR spectroscopy analysis showed the strong influence of the ratio R = [N2]/[NH3+N2] on the chemical bonds and hydrogen content in the films. Optical measurements were used to determine the refractive index, the absorption and the band gap, the variations of which are mainly correlated with the presence of ammonia in the plasma. In addition, our results indicate a way of producing a low etching rate, high band gap and low sub-band-gap optical absorption for silicon nitride.

引用

页码：87 / 94

页数：8