TRANSMISSION ELECTRON-MICROSCOPY OF SHORT-PERIOD SI/GE STRAINED-LAYER SUPERLATTICES ON GE SUBSTRATES

被引：27

作者：

WEGSCHEIDER, W ^{[1
]}

EBERL, K ^{[1
]}

CERVA, H ^{[1
]}

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,D-8000 MUNICH 83,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：448 / 450

页数：3

共 15 条

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J].

ABSTREITER, G ;

EBERL, K ;

FRIESS, E ;

WEGSCHEIDER, W ;

ZACHAI, R .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :431-438

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[3] STRUCTURE AND OPTICAL-PROPERTIES OF GE-SI ORDERED SUPERLATTICES [J].

BEVK, J ;

OURMAZD, A ;

FELDMAN, LC ;

PEARSALL, TP ;

BONAR, JM ;

DAVIDSON, BA ;

MANNAERTS, JP .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :760-762

[4] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

DAEMBKES, H ;

HERZOG, HJ ;

JORKE, H ;

KIBBEL, H ;

KASPAR, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :633-638

[5]

EBERL G, 1987, J PHYS C SOLID STATE, V5, P329

[6]

EBERL K, 1989, NATO ADV SCI I E-APP, V160, P153

[7] NEW OPTICAL-TRANSITIONS IN STRAINED SI-GE SUPERLATTICES [J].

FROYEN, S ;

WOOD, DM ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (08) :4547-4550

[8] MISFIT DISLOCATION-STRUCTURES AT MBE-GROWN SI1-XGEX/SI INTERFACES [J].

FUKUDA, Y ;

KOHAMA, Y ;

SEKI, M ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (09) :1593-1598

[9]

GIBSON JM, 1985, APPL PHYS LETT, V46, P689

[10] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J].

HULL, R ;

BEAN, JC ;

CERDEIRA, F ;

FIORY, AT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :56-58

← 1 2 →