FABRICS-II - A STATISTICALLY BASED IC FABRICATION PROCESS SIMULATOR

被引：44

作者：

NASSIF, SR ^{[1
]}

STROJWAS, AJ ^{[1
]}

DIRECTOR, SW ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1984年 / 3卷 / 01期

关键词：

D O I：

10.1109/TCAD.1984.1270055

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：40 / 46

页数：7

共 30 条

[1]

AKASAKA Y, 1982, APPL PHYS LETT, V21

[2]

ANTONIADIS DA, 1978, 50192 STANF EL LAB T

[3]

BRICE DK, 1975, ION IMPLANTATION RAN

[4]

DAVANZO DC, 1979, G2015 STANF EL LAB T

[5] A DESIGN METHODOLOGY AND COMPUTER AIDS FOR DIGITAL VLSI SYSTEM [J].

DIRECTOR, SW ;

PARKER, AC ;

SIEWIOREK, DP ;

THOMAS, DE .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1981, 28 (07) :634-645

[6] PROFILE PARAMETERS OF IMPLANTED-DIFFUSED ARSENIC LAYERS IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :583-586

[7]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[8]

GUPTA A, 1981, VLSI V105 CSD CARN U

[9]

GUPTA A, 1981, VLSI V105 CSD CARN M

[10] REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON [J].

LEE, HG ;

DUTTON, RW ;

ANTONIADIS, DA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :2001-2007

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