FABRICS-II - A STATISTICALLY BASED IC FABRICATION PROCESS SIMULATOR

被引：44

作者：

NASSIF, SR ^{[1
]}

STROJWAS, AJ ^{[1
]}

DIRECTOR, SW ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1984年 / 3卷 / 01期

关键词：

D O I：

10.1109/TCAD.1984.1270055

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：40 / 46

页数：7

共 30 条

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TRICK M, 1983, 1983 P ICCAD

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) :1570-&

[23]

WALKER HN, COMMUNICATION

[24]

WARD DE, 1982, IEEE T COMPUTER AIDE, V1

[25]

WASSINK HJ, 1983, INTEGRATION, V1

[26] REDISTRIBUTION OF ION-IMPLANTED IMPURITIES IN SILICON DURING DIFFUSION IN OXIDIZING AMBIENTS [J].

WU, CP ;

DOUGLAS, EC ;

MUELLER, CW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1095-1097

[27] BORON ATOM DISTRIBUTIONS IN IONS-IMPLANTED SILICON BY (N,HE-4) NUCLEAR-REACTION [J].

ZIEGLER, JF ;

BAGLIN, JEE ;

MASTERS, BJ ;

CROWDER, BL ;

COLE, GW .

APPLIED PHYSICS LETTERS, 1972, 21 (01) :16-&

[28]

[No title captured]

[29]

[No title captured]

[30]

1981, SUPRA 2 DIMENSIONAL

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