INVESTIGATION OF THE STRUCTURE OF THE 2X4 RECONSTRUCTIONS OF GAAS(001) BY ANALYSIS OF RHEED INTENSITY DATA

被引：7

作者：

KNIBB, MG

MAKSYM, PA

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 01期

关键词：

D O I：

10.1007/BF00615133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：25 / 29

页数：5

共 10 条

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[3] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES [J].

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LARSEN, PK .

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PHYSICAL REVIEW B, 1983, 27 (08) :4966-4977

[7] DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES [J].

LARSEN, PK ;

DOBSON, PJ ;

NEAVE, JH ;

JOYCE, BA ;

BOLGER, B ;

ZHANG, J .

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[8] A THEORY OF RHEED [J].

MAKSYM, PA ;

BEEBY, JL .

SURFACE SCIENCE, 1981, 110 (02) :423-438

[9] REFLECTION HIGH-ENERGY DIFFRACTION BY THE AG(001), AG(110) AND AG(111) SURFACES [J].

MAKSYM, PA ;

BEEBY, JL .

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[10]

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