CORRELATION BETWEEN THE BACKGATING EFFECT OF A GAAS-MESFET AND THE COMPENSATION MECHANISM OF A SEMI-INSULATING SUBSTRATE

被引：22

作者：

OGAWA, M

KAMIYA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：571 / 576

页数：6

共 17 条

[1]

BLUNT RT, 1981 GAAS IC S

[2]

Crossley I., 1977, I PHYS C SER, P289

[3]

ITOH T, 1980, IEEE T ELECTRON DEV, V27, P1027

[4]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[5]

Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF

[6] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].

LEE, CP ;

LEE, SJ ;

WELCH, BM .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98

[7] TEMPERATURE EFFECT ON LOW THRESHOLD VOLTAGE ION-IMPLANTED GAAS-MESFETS [J].

LEE, SJ ;

LEE, CP .

ELECTRONICS LETTERS, 1981, 17 (20) :760-761

[8]

MAKRAMEBEID S, 1982, 3RD P 3 5 SEM MAT, P336

[9] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[10] CHARACTERIZATION OF HORIZONTAL BRIDGMAN-GROWN SEMI-INSULATING GAAS FOR ION-IMPLANTATION [J].

MIZUTANI, T ;

HONDA, T ;

ISHIDA, S ;

KAWASAKI, Y .

SOLID-STATE ELECTRONICS, 1982, 25 (09) :885-891

← 1 2 →