CHARACTERIZATION OF HORIZONTAL BRIDGMAN-GROWN SEMI-INSULATING GAAS FOR ION-IMPLANTATION

被引:9
作者
MIZUTANI, T
HONDA, T
ISHIDA, S
KAWASAKI, Y
机构
关键词
D O I
10.1016/0038-1101(82)90177-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:885 / 891
页数:7
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共 13 条
[1]  
ASAI K, 1981, UNPUB GALLIUM ARSENI
[2]  
Asbeck P. M., 1980, IEEE Electron Device Letters, VEDL-1, P35, DOI 10.1109/EDL.1980.25221
[3]   LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J].
DONNELLY, JP ;
BOZLER, CO ;
LINDLEY, WT .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :273-276
[4]   MONOLITHIC MICROWAVE-AMPLIFIERS FORMED BY ION-IMPLANTATION INTO LEC GALLIUM-ARSENIDE SUBSTRATES [J].
DRIVER, MC ;
WANG, SK ;
PRZYBYSZ, JX ;
WRICK, VL ;
WICKSTROM, RA ;
COLEMAN, ES ;
OAKES, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :191-196
[5]  
FUJITA K, 1980, SUMITOMO ELECTRICAL, V97
[6]  
HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[7]   REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J].
KASAHARA, J ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L151-L154
[8]   THERMAL-CONVERSION OF GAAS [J].
KLEIN, PB ;
NORDQUIST, PER ;
SIEBENMANN, PG .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869
[9]  
LEE FS, 1980, P IEEE INT C CIRCUIT, P687
[10]   ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS [J].
MAGEE, TJ ;
LEE, KS ;
ORMOND, R ;
BLATTNER, RJ ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :447-449