ELECTRON-TUNNELING VIA GAMMA-STATES AND CHI-STATES IN GAAS/AL0.35GA0.65AS DOUBLE QUANTUM-WELL STRUCTURES

被引：4

作者：

NIDO, M ^{[1
]}

ALEXANDER, MGW ^{[1
]}

REIMANN, K ^{[1
]}

PLOOG, K ^{[1
]}

RUHLE, WW ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

SURFACE SCIENCE | 1990年 / 229卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90869-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Non-resonant electron tunneling through a 6 nm thick Alo.35Ga0.65As barrier is investigated by time-resolved photoluminescence. Application of hydrostatic pressure at 5 K reveals that tunneling via virtual X-states is at least 800 times less efficient than via virtual Γ-states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well into real X-states in the barriers is observed. © 1990.

引用

页码：195 / 198

页数：4

共 15 条

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