SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES

Sheet electron concentration at the heterointerface in Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As modulation-doped structures has been calculated as a function of the spacer layer thickness, the doping concentrations in Al//0//. //4//8In//0//. //5//2As and the lattice temperature. The calculated results were compared with those for Al//0//. //3Ga//0//. //7As/GaAs structures and also with experimental data. It is shown that, compared with AlGaAs/GaAs, about 1. 5 times higher sheet electron concentration can be obtained in AlInAs/GaInAs at the same doping level, which is in good agreement with the experimental results.