共 10 条
- [1] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155
- [3] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
- [4] HOT-ELECTRON VELOCITY OVERSHOOT IN GA0.47IN0.53AS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 773 - 774
- [5] GRIEM T, 1984, 3RD INT C MBE SAN FR
- [8] PEARSALL TP, 1983, IEEE ELECTR DEVICE L, V4, P5, DOI 10.1109/EDL.1983.25625
- [9] SHIBATOMI A, 1984, MATERIAL DEVICE CONS, P340