SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES

被引:12
作者
ITOH, T
GRIEM, T
WICKS, GW
EASTMAN, LF
机构
[1] CORNELL UNIV, SCH ELECT ENGN, ITHACA, NY 14853 USA
[2] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA
[3] NEC CORP, KAWASAKI 213, JAPAN
关键词
D O I
10.1049/el:19850266
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sheet electron concentration at the heterointerface in Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As modulation-doped structures has been calculated as a function of the spacer layer thickness, the doping concentrations in Al//0//. //4//8In//0//. //5//2As and the lattice temperature. The calculated results were compared with those for Al//0//. //3Ga//0//. //7As/GaAs structures and also with experimental data. It is shown that, compared with AlGaAs/GaAs, about 1. 5 times higher sheet electron concentration can be obtained in AlInAs/GaInAs at the same doping level, which is in good agreement with the experimental results.
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页码:373 / 374
页数:2
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