STRAINED INGAAS QUANTUM-WELL LASERS GROWN ON (111)B GAAS

被引：12

作者：

TAO, IW

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 08期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth by molecular beam epitaxy (MBE) of AlGaAs/GaAs/InGaAs strained quantum well lasers on GaAs (111)B substrates is reported. An excellent transparency current density J0 of 190 A/cm2 and an internal loss alpha(i) of 11 cm-1 were obtained on broad area lasers, which are potential surface emitting blue-green light sources.

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收藏

页码：705 / 706

页数：2

相关论文

共 9 条

[1] HIGH-QUALITY (111)B GAAS, ALGAAS, ALGAAS/GAAS MODULATION DOPED HETEROSTRUCTURES AND A GAAS/INGAAS/GAAS QUANTUM-WELL [J].

CHIN, A ;

MARTIN, P ;

HO, P ;

BALLINGALL, J ;

YU, TH ;

MAZUROWSKI, J .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1899-1901

[2] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

[3] REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES [J].

HAYAKAWA, T ;

KONDO, M ;

SUYAMA, T ;

TAKAHASHI, K ;

YAMAMOTO, S ;

HIJIKATA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L302-L305

[4] ORIENTATION DEPENDENCE OF VALENCE-SUBBAND STRUCTURES IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES [J].

HOUNG, MP ;

CHANG, YC ;

WANG, WI .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4609-4613

[5] ALGASB/GASB DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

LONGENBACH, KF ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1991, 59 (09) :1117-1119

[6] MONOLITHIC, SURFACE-EMITTING, SEMICONDUCTOR VISIBLE LASERS AND SPECTROMETERS FOR WDM FIBER COMMUNICATION-SYSTEMS [J].

NORMANDIN, R ;

LETOURNEAU, S ;

CHATENOUD, F ;

WILLIAMS, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1520-1530

[7] BLUE-GREEN SURFACE-EMITTING 2ND-HARMONIC GENERATORS ON (111) B GAAS [J].

VAKHSHOORI, D ;

FISCHER, RJ ;

HONG, M ;

SIVCO, DL ;

ZYDZIK, GJ ;

CHU, GNS ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :896-898

[8]

VAKHSHOORI D, 1992, IN PRESS J VAC SCI B

[9] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

VINA, L ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :36-37