ALIGNMENT-STABILIZED GRATING-TUNED EXTERNAL-CAVITY SEMICONDUCTOR-LASER

被引：10

作者：

ZORABEDIAN, P

TRUTNA, WR

机构：

[1] Hewlett-Packard Laboratories, Palo Alto, CA, 94303-0867

来源：

OPTICS LETTERS | 1990年 / 15卷 / 09期

关键词：

D O I：

10.1364/OL.15.000483

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have demonstrated an alignment-stabilized cavity configuration for a grating-tuned external-cavity semiconductor laser using a cylinder lens to form a line focus on the surface of the grating. The grating in the stabilized cavity has a 350-fold greater angular misalignment tolerance than in a conventional collimated-beam cavity, while the same spectral resolution is maintained. © 1990 Optical Society of America.

引用

页码：483 / 485

页数：3

共 11 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH2

[2]

ARNAUD JA, 1976, BEAM FIBER OPTICS, P30

[3] SEMICONDUCTOR OPTICAL AMPLIFIERS [J].