HIGH-SPEED PLANAR-STRUCTURE INP INGAASP INGAAS AVALANCHE PHOTODIODE GROWN BY VPE

被引：27

作者：

SUGIMOTO, Y ^{[1
]}

TORIKAI, T ^{[1
]}

MAKITA, K ^{[1
]}

ISHIHARA, H ^{[1
]}

MINEMURA, K ^{[1
]}

TAGUCHI, K ^{[1
]}

IWAKAMI, T ^{[1
]}

机构：

[1] NEC CORP,C&C SYST RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 16期

关键词：

D O I：

10.1049/el:19840447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：653 / 654

页数：2

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