INGAAS AVALANCHE PHOTO-DIODES FOR 1-MU-M WAVELENGTH REGION

被引：20

作者：

SHIRAI, T ^{[1
]}

MIKAWA, T ^{[1
]}

KANEDA, T ^{[1
]}

MIYAUCHI, A ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 14期

关键词：

D O I：

10.1049/el:19830363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：534 / 535

页数：2

相关论文

共 7 条

[1] ANDO H, 1980, JPN J APPL PHYS, V19, pL227
[2] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[3] HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS
MATSUSHIMA, Y
AKIBA, S
SAKAI, K
KUSHIRO, Y
NODA, Y
UTAKA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (22) : 945 - 946
[4] OSAKA F, 1982, 40TH ANN DEV RES C
[5] MULTIPLICATION NOISE IN PLANAR INP INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
SHIRAI, T
YAMASAKI, S
OSAKA, F
NAKAJIMA, K
KANEDA, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 532 - 533
[6] 1.0-1.6 MU-M PLANAR AVALANCHE PHOTO-DIODE BY LPE GROWN INP/INGAAS/INP DH STRUCTURE
SHIRAI, T
YAMAZAKI, S
YASUDA, K
MIKAWA, T
NAKAJIMA, K
KANEDA, T
[J]. ELECTRONICS LETTERS, 1982, 18 (13) : 575 - 577
[7] YASUDA K, 1982, 14TH C SOL STAT DEV, P103