MULTIPLICATION NOISE IN PLANAR INP INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES

被引：11

作者：

SHIRAI, T

YAMASAKI, S

OSAKA, F

NAKAJIMA, K

KANEDA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：532 / 533

页数：2

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[7] MULTIPLICATION NOISE OF INP AVALANCHE PHOTO-DIODES
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