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MULTIPLICATION NOISE OF INP AVALANCHE PHOTO-DIODES
被引:9
作者
:
SHIRAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
SHIRAI, T
[
1
]
OSAKA, F
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
OSAKA, F
[
1
]
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
YAMASAKI, S
[
1
]
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
KANEDA, T
[
1
]
SUSA, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
SUSA, N
[
1
]
机构
:
[1]
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 39卷
/ 02期
关键词
:
D O I
:
10.1063/1.92650
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:168 / 169
页数:2
相关论文
共 13 条
[1]
ANDO H, 1980, JPN J APPL PHYS, V19, pL227
[2]
AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
论文数:
0
引用数:
0
h-index:
0
DIADIUK, V
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
GROVES, SH
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
HURWITZ, CE
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(09)
: 807
-
810
[3]
PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
ARMIENTO, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
ARMIENTO, CA
DIADIUK, V
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DIADIUK, V
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
GROVES, SH
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(01)
: 74
-
76
[4]
FABRICATION OF COMPLETELY OH-FREE VAD FIBER
HANAWA, F
论文数:
0
引用数:
0
h-index:
0
HANAWA, F
SUDO, S
论文数:
0
引用数:
0
h-index:
0
SUDO, S
KAWACHI, M
论文数:
0
引用数:
0
h-index:
0
KAWACHI, M
NAKAHARA, M
论文数:
0
引用数:
0
h-index:
0
NAKAHARA, M
[J].
ELECTRONICS LETTERS,
1980,
16
(18)
: 699
-
700
[5]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
[6]
MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
论文数:
0
引用数:
0
h-index:
0
MCINTYRE, RJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 164
-
+
[7]
INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
NISHIDA, K
TAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
TAGUCHI, K
MATSUMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
MATSUMOTO, Y
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(03)
: 251
-
253
[8]
INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE
OSAKA, F
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
OSAKA, F
NAKAZIMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NAKAZIMA, K
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
KANEDA, T
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
SAKURAI, T
[J].
ELECTRONICS LETTERS,
1980,
16
(18)
: 716
-
716
[9]
SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499
[10]
NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
NAKAGOME, H
论文数:
0
引用数:
0
h-index:
0
NAKAGOME, H
MIKAMI, O
论文数:
0
引用数:
0
h-index:
0
MIKAMI, O
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(08)
: 864
-
870
←
1
2
→
共 13 条
[1]
ANDO H, 1980, JPN J APPL PHYS, V19, pL227
[2]
AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
论文数:
0
引用数:
0
h-index:
0
DIADIUK, V
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
GROVES, SH
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
HURWITZ, CE
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(09)
: 807
-
810
[3]
PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
ARMIENTO, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
ARMIENTO, CA
DIADIUK, V
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DIADIUK, V
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
GROVES, SH
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(01)
: 74
-
76
[4]
FABRICATION OF COMPLETELY OH-FREE VAD FIBER
HANAWA, F
论文数:
0
引用数:
0
h-index:
0
HANAWA, F
SUDO, S
论文数:
0
引用数:
0
h-index:
0
SUDO, S
KAWACHI, M
论文数:
0
引用数:
0
h-index:
0
KAWACHI, M
NAKAHARA, M
论文数:
0
引用数:
0
h-index:
0
NAKAHARA, M
[J].
ELECTRONICS LETTERS,
1980,
16
(18)
: 699
-
700
[5]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
[6]
MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
论文数:
0
引用数:
0
h-index:
0
MCINTYRE, RJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 164
-
+
[7]
INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
NISHIDA, K
TAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
TAGUCHI, K
MATSUMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki
MATSUMOTO, Y
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(03)
: 251
-
253
[8]
INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE
OSAKA, F
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
OSAKA, F
NAKAZIMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NAKAZIMA, K
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
KANEDA, T
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
SAKURAI, T
[J].
ELECTRONICS LETTERS,
1980,
16
(18)
: 716
-
716
[9]
SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499
[10]
NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
SUSA, N
论文数:
0
引用数:
0
h-index:
0
SUSA, N
NAKAGOME, H
论文数:
0
引用数:
0
h-index:
0
NAKAGOME, H
MIKAMI, O
论文数:
0
引用数:
0
h-index:
0
MIKAMI, O
ANDO, H
论文数:
0
引用数:
0
h-index:
0
ANDO, H
KANBE, H
论文数:
0
引用数:
0
h-index:
0
KANBE, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(08)
: 864
-
870
←
1
2
→