LATTICE SITES OF ARSENIC IONS IMPLANTED IN DIAMOND

被引：15

作者：

BHARUTHRAM, K ^{[1
]}

QUINTEL, H ^{[1
]}

RESTLE, M ^{[1
]}

RONNING, C ^{[1
]}

HOFSASS, H ^{[1
]}

JAHN, SG ^{[1
]}

机构：

[1] CERN, ISOLDE COLLABORAT, CH-1211 GENEVA 23, SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.359753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0X10(13) cm(-2) Se-73 ions was implanted into IIa diamond at 300 K with an energy of 60 keV. Se-73 (t(12)=7.1 h) decays to As-73 (t(1/2)=80 d), which in turn decays to excited states in Ge-73. Channeling effects were measured on conversion electrons emitted in the Ge-73 decay. Annealing studies in the range 873-1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites. (C) 1995 American Institute of Physics.

引用

页码：5180 / 5182

页数：3

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