ELECTRONIC-STRUCTURE OF AMORPHOUS HYDROGENATED SILICON BY SOFT-X-RAY SPECTROSCOPY

被引：21

作者：

SENEMAUD, C ^{[1
]}

PITAULT, B ^{[1
]}

BOURDON, B ^{[1
]}

机构：

[1] LAB MARCOUSSIS, F-91460 MARCOUSSIS, FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(82)91174-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：483 / 485

页数：3

共 18 条

[1] ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[2] BOURDON B, 1977, RES REPORT
[3] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4] THEORETICAL STUDIES OF ELECTRONIC STATES PRODUCED BY HYDROGENATION OF AMORPHOUS SILICON
CHING, WY
LAM, DJ
LIN, CC
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (12) : 805 - 808
[5] ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON
CHING, WY
LAM, DJ
LIN, CC
[J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2378 - 2387
[6] THE ELECTRONIC-STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS-SILICON
DIVINCENZO, DP
BERNHOLC, J
BRODSKY, MH
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 137 - 140
[7] DIVINCENZO DP, 1981, 9TH INT C AM LIQ SEM
[8] THEORY OF FLUCTUATIONS AND LOCALIZED STATES IN AMORPHOUS TETRAHEDRALLY BONDED SOLIDS
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2764 - 2774
[9] DENSITY OF STATES OF AMORPHOUS HYDROGENATED SI
LEMAIRE, P
GASPARD, JP
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 765 - 768
[10] LEMAIRE P, 1981, 9TH INT C AM LIQ SEM