ELECTRON-HOLE INTERACTION OF D-CORE LEVELS IN 3-V SEMICONDUCTORS

被引：18

作者：

THIRY, P

PETROFF, Y

PINCHAUX, R

CHELIKOXSKY, JR

COHEN, ML

机构：

[1] LURE, ORSAY, FRANCE

[2] UNIV PARIS 06, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE

[3] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DEPT PHYS, MAT & MOLEC RES DIV, BERKELEY, CA 94720 USA

来源：

关键词：

D O I：

10.1016/0038-1098(76)90419-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1107 / 1109

页数：3

共 9 条

[1] ELECTROREFLECTANCE OF GAP TO 27 EV
ASPNES, DE
OLSON, CG
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[2] ASPNES DE, PHYS REV B, P2524
[3] EASTMAN DE, TO BE PUBLISHED
[4] CORE LEVELS OF III-V SEMICONDUCTORS
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[5] CORE EXCITON AND BAND-STRUCTURE IN LIF
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[6] ABSORPTION OF SOFT X-RAYS BY INSULATORS WITH A FORBIDDEN EXCITON TRANSITION
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[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (12) : 756 - 759
[7] SYNCHROTRON RADIATION MEASUREMENTS AND CALCULATION OF CORE TO CONDUCTION LEVEL TRANSITIONS IN LEAD CHALCOGENIDES
MARTINEZ, G
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[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (01) : 5 - 9
[8] FINE-STRUCTURE OF E1' PEAK IN GE AND GAAS
PANDEY, KC
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[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1560 - 1563
[9] DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE III-V AND II-VI SEMICONDUCTORS
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