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LATERAL PROFILING OF INTERFACE STATES ALONG THE SIDEWALLS OF CHANNEL-STOP ISOLATION
被引:13
作者
:
HAWKINS, GA
论文数:
0
引用数:
0
h-index:
0
HAWKINS, GA
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1985年
/ 28卷
/ 09期
关键词
:
D O I
:
10.1016/0038-1101(85)90088-7
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:945 / 956
页数:12
相关论文
共 25 条
[1]
APPELS JA, 1970, PHILIPS RES REP, V25, P118
[2]
CAPACITANCE TRANSIENT SPECTROSCOPY OF TRACE CONTAMINATION IN SILICON
BENTON, JL
论文数:
0
引用数:
0
h-index:
0
BENTON, JL
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
KIMERLING, LC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 2098
-
2102
[3]
CHANNEL POTENTIAL AND CHANNEL WIDTH IN NARROW BURIED-CHANNEL MOSFETS
BURKEY, BC
论文数:
0
引用数:
0
h-index:
0
BURKEY, BC
LUBBERTS, G
论文数:
0
引用数:
0
h-index:
0
LUBBERTS, G
TRABKA, EA
论文数:
0
引用数:
0
h-index:
0
TRABKA, EA
TREDWELL, TJ
论文数:
0
引用数:
0
h-index:
0
TREDWELL, TJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
: 423
-
429
[4]
LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICES
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
CHATTERJEE, PK
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
TAYLOR, GW
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
TASCH, AF
FU, HS
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
FU, HS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 564
-
576
[5]
CLAEYS C, 1984, 1984 P M EL SOC CINC, P272
[6]
MODELING OF THE SILICON INTEGRATED-CIRCUIT DESIGN AND MANUFACTURING PROCESS
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(09)
: 968
-
986
[7]
SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 783
-
+
[8]
ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
PHYSICAL REVIEW,
1952,
87
(02):
: 387
-
387
[9]
ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION
HASHIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
HASHIMOTO, H
SHIBAYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SHIBAYAMA, H
MASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
MASAKI, H
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(12)
: 1899
-
1902
[10]
DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
ISOMAE, S
TAMAKI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
TAMAKI, Y
YAJIMA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
YAJIMA, A
NANBA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
NANBA, M
MAKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
MAKI, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 1014
-
1019
←
1
2
3
→
共 25 条
[1]
APPELS JA, 1970, PHILIPS RES REP, V25, P118
[2]
CAPACITANCE TRANSIENT SPECTROSCOPY OF TRACE CONTAMINATION IN SILICON
BENTON, JL
论文数:
0
引用数:
0
h-index:
0
BENTON, JL
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
KIMERLING, LC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 2098
-
2102
[3]
CHANNEL POTENTIAL AND CHANNEL WIDTH IN NARROW BURIED-CHANNEL MOSFETS
BURKEY, BC
论文数:
0
引用数:
0
h-index:
0
BURKEY, BC
LUBBERTS, G
论文数:
0
引用数:
0
h-index:
0
LUBBERTS, G
TRABKA, EA
论文数:
0
引用数:
0
h-index:
0
TRABKA, EA
TREDWELL, TJ
论文数:
0
引用数:
0
h-index:
0
TREDWELL, TJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
: 423
-
429
[4]
LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICES
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
CHATTERJEE, PK
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
TAYLOR, GW
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
TASCH, AF
FU, HS
论文数:
0
引用数:
0
h-index:
0
机构:
the: Central Research Laboratories, Texas Instruments Incorporated, Dallas
FU, HS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 564
-
576
[5]
CLAEYS C, 1984, 1984 P M EL SOC CINC, P272
[6]
MODELING OF THE SILICON INTEGRATED-CIRCUIT DESIGN AND MANUFACTURING PROCESS
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(09)
: 968
-
986
[7]
SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 783
-
+
[8]
ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
[J].
PHYSICAL REVIEW,
1952,
87
(02):
: 387
-
387
[9]
ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION
HASHIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
HASHIMOTO, H
SHIBAYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
SHIBAYAMA, H
MASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
MASAKI, H
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(12)
: 1899
-
1902
[10]
DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
ISOMAE, S
TAMAKI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
TAMAKI, Y
YAJIMA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
YAJIMA, A
NANBA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
NANBA, M
MAKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Limited, Kokubunji
MAKI, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 1014
-
1019
←
1
2
3
→