CAPACITANCE TRANSIENT SPECTROSCOPY OF TRACE CONTAMINATION IN SILICON

[1] Benton J. L., 1979, AIP C P, V50, P543

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] GRAFF K, 1981, ELECTROCHEMICAL SOC, P309

[4] KATZ LE, 1978, J ELECTROCHEM SOC, V125, P10

[5] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[6] Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[7] OXYGEN-RELATED DONOR STATES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 410 - 412

[8] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1497 - 1505

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[10] KIMERLING LC, 1979, I PHYS C SER, V46, P56

[1] Benton J. L., 1979, AIP C P, V50, P543

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] GRAFF K, 1981, ELECTROCHEMICAL SOC, P309

[4] KATZ LE, 1978, J ELECTROCHEM SOC, V125, P10

[5] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[6] Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[7] OXYGEN-RELATED DONOR STATES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 410 - 412

[8] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1497 - 1505

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[10] KIMERLING LC, 1979, I PHYS C SER, V46, P56