INFRARED MICROSCOPY STUDY OF ANOMALOUS LATCHUP CHARACTERISTICS DUE TO CURRENT REDISTRIBUTION IN DIFFERENT PARASITIC PATHS

被引：8

作者：

CANALI, C

CORSI, F

MUSCHITIELLO, M

ZANONI, E

机构：

[1] UNIV BARI,DIPARTIMENTO ELETTROTECN & ELETTRON,I-70125 BARI,ITALY

[2] CTR STUDI APPLICAZ TECNOL AVANZATE,BARI,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：969 / 978

页数：10

共 19 条

[1]

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[2] MEASUREMENT OF THE LOCAL LATCH-UP SENSITIVITY BY MEANS OF COMPUTER-CONTROLLED SCANNING ELECTRON-MICROSCOPY [J].

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GIANNINI, M ;

SCORZONI, A ;

VANZI, M ;

ZANONI, E .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (02) :597-603

[3] SEEING THROUGH THE LATCH-UP WINDOW [J].

COPPAGE, FN ;

ALLEN, DJ ;

DRESSENDORFER, PV ;

OCHOA, A ;

RAUCHFUSS, J ;

WROBEL, TF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4122-4126

[4]

CROES R, 1986, ELECTRON COMPONENTS, V7, P187

[5]

ESTREICH DB, 1980, G2019 STANF EL LAB T

[6] OBSERVATION OF LATCH-UP PHENOMENA IN CMOS ICS BY MEANS OF DIGITAL DIFFERENTIAL VOLTAGE CONTRAST [J].

FANTINI, F ;

VANZI, M ;

MORANDI, C ;

ZANONI, E .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (01) :169-174

[7]

HIATT J, 1981, 19TH IEEE ANN P INT, P122

[8]

JOHNSTON AH, 1985, IEEE T NUCL SCI, V32, P4018

[9]

Khurana N., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P122, DOI 10.1109/IRPS.1984.362029

[10]

LI W, 1987, SOLID STATE ELECTRON, V30, P1331

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