MODIFICATION OF GAAS SURFACE STOICHIOMETRY AND REACTIVITY INDUCED BY A HYDROGEN PLASMA

被引：3

作者：

DEBIEMMECHOUVY, C

BALLUTAUD, D

PESANT, JC

SEVERAC, C

ETCHEBERRY, A

机构：

[1] UNIV PARIS 11, LMS, CNRS, F-91405 ORSAY, FRANCE

[2] LAB PHYS SOLIDE, CNRS, F-92195 MEUDON, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90733-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using XPS and SIMS analyses combined with effusion experiments it is shown that hydrogen-plasma treatment of GaAs surface induces both a modification of the superficial stoichiometry and a loss of reactivity toward oxygen. This phenomenon is explained by the accumulation of hydrogen in the near-surface region. When this hydrogen is outgassed by thermal annealing, the GaAs recovers partially its reactivity toward oxygen.

引用

页码：643 / 646

页数：4

共 15 条

[11] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].