X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSIS OF CHANGES IN INP AND INGAAS SURFACES EXPOSED TO VARIOUS PLASMA ENVIRONMENTS

被引：37

作者：

THOMAS, JH

KAGANOWICZ, G

ROBINSON, JW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 05期

关键词：

D O I：

10.1149/1.2095924

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1201 / 1206

页数：6

共 29 条

[1] XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].

BERTRAND, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33

[2] CHEMICAL-DEPOSITION OF SIO2 ON INP [J].

BERTRAND, PA ;

FLEISCHAUER, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :832-836

[3] THE PHOTOCHEMICAL OXIDATION OF GAAS [J].

BERTRAND, PA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :973-976

[4] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J].

CHANG, RPH ;

CHANG, CC ;

DARACK, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :45-50

[5]

DYLLA HF, 1982, ACS S SER, V199

[6]

ENSTROM R, UNPUB J ELECTROCHEM

[7]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[8] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :423-425

[9] STUDY OF THE INTERACTION OF PLASMAS WITH III-V SEMICONDUCTOR SURFACES, APPLICATION TO PASSIVATION [J].

FRIEDEL, P ;

GOURRIER, S ;

THEETEN, JB ;

ARNOULT, D ;

TAILLEPIED, M ;

ERMAN, M .

SURFACE SCIENCE, 1986, 168 (1-3) :635-644

[10] ON THE NATURE OF OXIDES ON INP-SURFACES [J].

HOLLINGER, G ;

BERGIGNAT, E ;

JOSEPH, J ;

ROBACH, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088

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