CHEMICAL-DEPOSITION OF SIO2 ON INP

被引：4

作者：

BERTRAND, PA

FLEISCHAUER, PD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：832 / 836

页数：5

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